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Matsushita Electric (Panasonic) Develops A New Gallium Nitride (GaN) Power Transistor with Normally-off Operation | Press Release | Panasonic Newsroom Global
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Panasonic Developed a New Generation Power Device 'X-GaN' to Minimize Power Loss and Provide High Voltage Potential, Ease of Miniaturization & High-Speed Switching – Photoxels
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Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices - Infineon Technologies
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Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (TM) | Business Wire
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Panasonic Developed a New Generation Power Device 'X-GaN' to Minimize Power Loss and Provide High Voltage Potential, Ease of Miniaturization & High-Speed Switch… | High voltage, Power loss, Power
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